Abstract
NiO-doped WO 3 thick films were prepared by the screen-printing technique. The microstructure and the electrical properties were investigated as functions of the amount of NiO, partial pressure of oxygen, concentration of NO 2 and temperature. The grain growth is inhibited by the addition of NiO. The electrical conductance of undoped WO 3 is high at low partial pressure of oxygen. The electrical conductance of NiO-doped WO 3 in air increases with NiO content of up to 1.0 mol%, and then it decreases. The sensitivity for NO 2 gas increases for samples with 1.0 mol% of NiO, and then it decreases for 10 mol% NiO samples.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
