Abstract
A uniform epitaxial CoSi2 layer could be grown on a Si(100) substrate by deposition of a CoNx interlayer followed by an in situ annealing process. The amorphous Si–N layer which is formed at the CoNx/Si interface plays a role in inhibiting excessive Co incorporation into Si layer and consequently enhancing the epitaxial growth of CoSi2 layer. However, the Si–N layer also limits the growth of thick CoSi2 layer. Therefore, the thickness of the amorphous Si–N layer is an important factor for the epitaxial growth of the CoSi2 layer with uniform structure and low sheet resistance.
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