Abstract
The dependence of the electrical properties of (SrxTi1-x)O3 films, which were deposited with Ar carrier gas, on their Sr/Ti composition ratio were investigated. The relative high dielectric loss, the relative high leakage current density and the nonuniform composition depth profiles of the films were found. The degradation of the Sr(TMHD)2 during evaporation process was considered to be a possible reason of that. The adduct formation and the reduced oligomerization in the Sr(TMHD)2 with NH3 carrier gas was found in the H-NMR study. Therefore, NH3 carrier gas was employed to restrict the degradation of the Sr(TMHD)2. The uniform compositional depth profiles, less hydrogen, carbon content, very fine microstructure and good electrical properties of the films were obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.