Abstract
The dependence of the electrical properties of (SrxTi1-x)O3 films, which were deposited with Ar carrier gas, on their Sr/Ti composition ratio were investigated. The relative high dielectric loss, the relative high leakage current density and the nonuniform composition depth profiles of the films were found. The degradation of the Sr(TMHD)2 during evaporation process was considered to be a possible reason of that. The adduct formation and the reduced oligomerization in the Sr(TMHD)2 with NH3 carrier gas was found in the H-NMR study. Therefore, NH3 carrier gas was employed to restrict the degradation of the Sr(TMHD)2. The uniform compositional depth profiles, less hydrogen, carbon content, very fine microstructure and good electrical properties of the films were obtained.
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