Abstract
(Ba0.8Sr0.2)(Zr0.2Ti0.8)O3 (BSZT) films were grown on La0.5Sr0.5CoO3 buffered (001) SrTiO3 substrates by pulsed laser deposition. Effects of Co doping on electrical properties of the films were investigated to establish material design through defects control. The doping led to a significant improvement in the electrical properties with reduction in leakage current and dielectric loss. In addition, the dielectric tunability and figure of merit were enhanced, implying that Co-doped BSZT films are promising materials for tunable microware applications. Our detail studies suggest that the improved electrical properties of Co-doped BSZT films are closely related to defect concentrations in the films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
