Abstract
The effect of Nd content in Al films on hillock formation was investigated for applications of interconnections for thin film transistor liquid crystal displays. It was found that the hillock density of Al–Nd alloy films was strongly dependent on the Nd content, and the hillocks were completely suppressed in Al–2.0–6.0 at. % Nd alloy films. X-ray diffractometry, x-ray absorption fine-structure spectroscopy, and transmission electron microscopy indicated that the microstructures of Al–Nd alloy films strongly depend on the Nd content, and Al–2.0–6.0 at. % Nd alloy films form a stable solid solution with a polycrystalline α-Al-like structure. The results obtained from microstructural analysis were largely in agreement with hillock formation behavior. In this study, it was found that the excellent hillock resistance of Al–2.0–6.0 at. % Nd alloy films originates from solid-solution hardening by the strongly distorted α-Al-like structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
