Abstract
Effects of the N2O plasma treatment (PT) on perhydropolysilazane spin-on-dielectric (PHPS SOD) were examined as potential inter-layer-dielectrics (ILDs) for sub-30nm Si circuits. The spin-coated PHPS (18.5wt.%) ILD layers converted at 650°C were integrated with the 0.18μm Si front-end-of-the line process. A modified contact pre-cleaning scheme using N2O PT produced more uniform and stable contact chain resistances from the SOD ILDs than the case of pre-cleaning only by buffered oxide etcher. Our analysis shows that this enhancement is due to the minimized carbon contamination on the PHPS side-wall surface densified by PT.
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