Abstract
The effect of remote plasma nitridation (RPN) pretreatment on the structural and electrical characteristics of remote plasma atomic layer-deposited HfO 2 films was investigated. An atomic change in the nitrogen's partial local coordination structure in the vicinity of Hf-O-Si was closely associated with the structural and electrical characteristics of the HfO 2 films. The HfO 2 film pretreated with RPN retained its amorphous structure after rapid thermal annealing at 600°C for 30 s. The RPN pretreated-HfO 2 film also showed significant enhancement of the gate capacitance and retained low leakage current densities (6.70 X 10 -8 A cm -2 at |V G - V FB | = 2 V).
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