Abstract
The chemical structure and electrical properties of HfO 2 thin film grown by rf reactive magnetron sputtering after rapid thermal annealing (RTA) were investigated. The chemical composition of HfO 2 films and interfacial chemical structure of HfO 2/Si in relation to the RTA process were examined by X-ray photoelectron spectroscopy. Hf 4 f and O 1 s core level spectra suggest that the as-deposited HfO 2 film is nonstoichiometric and the peaks shift towards lower binding energy after RTA. The Hf–Si bonds at the HfO 2/Si interface can be broken after RTA to form Hf–Si–O bonds. The electrical characteristics of HfO 2 films were determined by capacitance–voltage ( C–V) and current density–voltage ( J–V) measurements. The results showed that the density of fixed charge and leakage current density of HfO 2 film were decreased after the RTA process in N 2 atmosphere.
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