Abstract

Abstract 1 mol% of MgO was added together with 7 mol% of Yb 2 O 3 as sintering additives to silicon nitride powder to fabricate advanced silicon nitride ceramics with both high thermal conductivity and low dielectric loss at 2 GHz. The mixed powder was CIPed at a pressure of 120 MPa and was gas-pressure sintered at 1900 °C to >98% of theoretical density. The sintered Si 3 N 4 sample exhibited a high thermal conductivity of ∼100 W m −1 K −1 and a loss tangent (tan δ ) of ∼4 × 10 −4 , concurrently. The tan δ was further reduced by half after the heat treatment at 1300 °C for 24 h. The improvement in tan δ due to the annealing was explained from the point of crystallization of the intergranular glassy phase.

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