Effects of Mg doping on photoelectrical properties of hydrogenated GaN films grown at 380 °C

Abstract

The effects of Mg doping on hydrogenated GaN films grown at 380 °C are investigated in terms of the photoelectrical properties of simple sandwich-type cells. The photocurrent increases with Mg until it reaches maximum and the dark current decreases monotonically with Mg doping. The photovoltaic current of the cells using transparent conductive glass substrates exhibits excellent linearity with an optical power. The peak responsivity at a 0 V bias is 0.02 A/W at 340 nm, which corresponds to an internal quantum efficiency of approximately 0.3. This simple cell functions as a visible-blind ultraviolet detector and also a transparent solar cell.