Abstract
We deposited monolayer thin films of Zn 4Sb 3 and CeFe 2Co 2Sb 12 on 100 nm thick silicon dioxide coated Si substrates with 383 nm and 384 nm thickness respectively, using electron beam evaporation. Following the electron deposition, we performed post ion bombardment at a constant energy of 5 MeV while varying fluence from 10 12–10 15 ions/cm 2. The Si ions bombardment modified the electrical and phonon interactions in the material by causing the changes at the thermoelectric properties as well. We also report on the fluence dependence of the dimensionless figure of merit, ZT, Seebeck Coefficient, thermal conductivity and electrical conductivity. In addition, Rutherford backscattering spectrometry (RBS) was used to analyze the elemental composition and the thickness of the deposited material. The thickness of each film was also specified by interferometer measurements.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
