Abstract
We have studied the influence of the methane gas (CH 4) flow rate on the composition, structural and electrical properties of nitrogenated amorphous carbon (a-C:N) films grown by surface wave microwave plasma chemical vapor deposition (SWMP-CVD) using Auger electron spectroscopy (AES), X-rays photoelectron spectroscopy (XPS), UV–visible spectroscopy, 4-point probe and 2-probe method resistance measurement. The photoelectrical properties of a-C:N films was also studied. We have succeed to grow a-C:N films using a novel method of SWMP-CVD at room temperature and found that the deposition rate, bonding, optical and electrical properties of a-C:N films are strongly dependent on the CH 4 gas sources and the a-C:N films grown at higher CH 4 gas flow rate have relatively high electrical conductivity for both cases of in dark and under illumination condition.
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