Abstract
We have studied the influence of the methane gas (CH 4) pressure on the surface morphology, composition, structural and electrical properties of nitrogenated amorphous carbon (a-C:N) films grown by surface wave microwave plasma chemical vapor deposition (SWMP-CVD) using Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Auger electron spectroscopy (AES), X-rays photoelectron spectroscopy (XPS), UV-visible spectroscopy and 4-point probe resistance measurement. We have succeed to grow a-C:N films using a novel method of SWMP-CVD at room temperature and found that the surface morphology, bonding, optical and electrical properties of a-C:N films are strongly dependent on the CH 4 gas sources and the a-C:N films grown at higher CH 4 gas pressure have relatively high electrical conductivity.
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