Abstract
Effective work function (EWF) change is investigated under both externally-applied mechanical stresses and process-induced stresses. Four-point wafer bending and ring bending techniques are used to generate uniaxial and biaxial mechanical stresses, respectively. For the process-induced stresses, bowing technique and charge pumping method are used for stress characterization and interface state measurement. It was found that higher stress presents in devices with thinner metal gate, regardless the thermal treatment cycle. EWF decreases under both tensile and compressive stress was observed due to the increase of defect activation energy lowering induced donor-like interface states.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
