Abstract
The development of metal doped α-Fe2O3 (hematite) based wide band gap semiconductors with high electrical conductivity, high electrical polarization and wide optical band gap is a challenging problem and also useful for application point of view. In this work, a substantial enhancement of electrical conductivity, optical band gap and ferroelectric polarization have been recorded at room temperature for Sc doped α-Fe2O3 system. Two different methods of the mechanical alloying and subsequent heat treatment have been used to synthesize the samples of α-Fe2-xScxO3 oxide (x = 0.2–1.0). The X-ray diffraction patterns have confirmed formation of single-phased Rhombohedral structure for low Sc doping content (x = 0.2), whereas a mixture of Rhombohedral-structured α-Fe2O3 type phase and cubic-structured Sc2O3 type phase has been formed for the higher Sc contents (x = 0.5 and 1.0). The phase fractions varied depending on the amount of Sc content, chemical reaction during mechanical alloying of the elementary oxides and solid-state reaction during the heat treatment. Response of the Sc2O3 type phase in Raman spectra is sensitive depending on the methods of inter-mixing the α-Fe2O3 and Sc2O3 by mechanical alloying. X-ray photoelectron spectroscopy (XPS) confirmed the metal (Fe, Sc) ions in +3 charge state, although the samples for low Sc content x = 0.2 showed a signature of Fe+2 and Sc+4 states. A detailed analysis of the Fe 3s XPS band confirmed a strong 3s-3d spins exchange coupling of strengths 1.18 eV–1.34 eV.
Published Version
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