Effects of Low Boron Concentration on Electrical Properties of Commercial Trap-Rich High Resistivity SOI Substrate

Abstract

Electrical properties of boron lightly doped trap-rich layers of trap-rich high resistivity silicon-on-insulator (trap-rich HR-SOI) substrates are investigated. Secondary Ion Mass Spectroscopy (SIMS) is used to measure boron distribution. Resistivity profiles are studied by means of Spreading-resistance profiling (SRP). Moreover, radio frequency (RF) performance of the trap-rich HR-SOI substrates is evaluated using coplanar waveguide (CPW) lines. It is found that RF losses and harmonic distortions keep unchanged when boron concentration of the trap-rich layer is lower than 5 × 1014 cm−3. It is suggested that the trap-rich layer can still effectively restrain the parasitic surface conductance (PSC) effect.