Abstract
Abstract We have calculated the electric field dependence of the binding energy of excitons confined in shallow isolated quantum wells using a variational method. The exciton binding energy for a 10 nm wide In .125 Ga .875 As-GaAs quantum well is reduced by 2 meV for fields approaching 60 kVcm -1 . This lowering of the binding energy is less for narrower wells. These results compare favourably to photocurrent measurements of the field dependent interband transitions for a 5.5, 7.5, and 10 nm InGaAs-GaAs quantum wells.
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