Abstract
The temperature and light intensity dependences of photoconductivity(PC) and PC response time(t r ) were investigated in undoped a-Si:H. The effects of light-soaking at 110K and 300K on PC and tr are compared. The experimental results suggest that two kinds of metastable centers are induced by lightsoaking: one corresponds to increase in the subband-gap absorption, the other corresponds to the degradation of μτ product.
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