Abstract
Light extraction efficiency (LEE) droop as an important factor contributing to the efficiency droop of InGaN-based light-emitting diodes (LEDs) has been demonstrated and investigated in detail. The LEE droop effect is induced by the spatial dependence of the extraction efficiency of photons inside of the LED devices and the aggravating crowding effect of the injection electrons around n-type electrodes as injection current increases. A current blocking layer is introduced to alleviate the LEE droop effect. And the light output power of the LEDs is also improved by 43% at an injection current of 350 mA.
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