Abstract
The influence of various effects inherent to the high-energy ion bombardment of crystals on the latent track formation is treated. The nature of tracks is dependent on a type of solids. The relaxation of strong electron excitation which occurs under irradiation of materials by energetic ions is the main parameter which defines the nature of track regions. The track migration of implanted atoms as well as track channeling of incident ions is discussed for ion implantation in semiconductors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
