Abstract
The concentration of electrically active phosphorus which can be introduced into silicon by conventional high temperature diffusion is limited to about 4 × 1020 cm−3, Phosphorus in excess of this concentration is inactive because it is precipitated and/or paired with doubly charged vacancies according to the Fair-Tsai model. It has been shown recently that this phosphorus can be partly or totally reactivated by irradiation with high energy (1 J/cm2) ruby laser pulses of short duration and that more heavily doped junctions can be realized by such treatment. In this work, a systematic study of this effect has been performed using SIMS, RBS, Hall and sheet resistance measurements. The influence of the diffusion and irradiation conditions and also of post irradiation thermal treatment has been considered. The results show that the increase of electrically active phosphorus after laser treatment is not only related to the dissolution of precipitates but also to the dissociation of P+ V−- pairs.
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