Abstract
Average resistivity curves are calculated for subsurface diffused layers in silicon using the updated resistivity-concentration data available for boron- and phosphorus-doped bulk silicon. This complements a recent paper of the author on full-depth diffused profiles, making up a complete equivalent of Irvin's original set. An improved representation format is used, which decompresses the resistivity scale and also reduces to half the total number of graphs involved in average resistivity calculations.
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