Abstract
We studied the processes of pulsed and continuous-wave (CW) laser excitation of photoluminescence (PL) in nc-Si/SiOx nanoparticles. CW laser irradiation of the nc-Si/SiOx sol in dimethylsulfoxide (DMSO) and in a thin film was found to quench PL with an essentially nonexponential dynamics. The laser-induced variation of the Rayleigh scattering signal from the nc-Si/SiOx sol in DMSO was found to replicate that of the PL quenching. The IR and Raman spectra of the laser-exposed nc-Si/SiOx exhibited no new bands that could be evidence of their chemical transformations. There were also no perceptible effects pointing to laser-induced aggregation of the nc-Si/SiOx particles in the sol. 355 nm pulse-periodic laser irradiation of the nc-Si/SiOx particles preliminarily exposed to a 405 nm CW laser (which causes a strong PL quenching effect) was found to result in a rapid restoration of the original PL signal, which means that the effect of laser quenching of PL can be entirely reversible. We considered a mechanism of the reversible photosensitivity of nc-Si/SiOx, based on the processes of ionization of the photoluminescent oxygen-deficient centers in their suboxide shell and electron capture by traps, followed by their laser-assisted photorecombination.
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