Effects of irradiation on the Noise and DC performance of transistors and preamplifiers based on GaAs technology

Abstract

We report measurement results with single GaAs field effect transistors and monolithic CHFET based operational amplifiers in GaAs technology. All the devices have been exposed to neutron irradiation (1MeV) with a total fluence of 10 15 n/cm 2 . The amplifiers considered here had already been irradiated either with photons from a 60 Co souce for a 100 Mrad dose or with 10 14 n/cm 2 neutrons. All devices remain fully functional after irradiation. We compare their amplification and noise parameters before and after the (additional) exposure of 10 15 n/cm 2 .