Radiation hardness of GaAs complementary heterojunction field effect transistors (CHFETs) and CHFET-based monolithic amplifiers

Abstract

We report measurement results with single GaAs complementary heterojunction field effect transistors (CHFETs) and monolithic CHFET-based operational amplifiers. The devices have been exposed to neutrons (1 MeV peak energy, total fluence of 5 × 10 14 n cm 2 ) and protons (23 GeV, total fluence of 5 × 10 14 p cm 2 ). The amplifiers irradiated with 5 × 10 14 neutrons cm 2 had already been irradiated either with photons from a 60Co source for a 100 Mrad dose or with 10 14neutrons/cm 2. All devices remained fully functional after irradiation. We compare their amplification and noise parameters before and after the (additional) exposure.