Abstract
The significance of using different ionization rates on the operating characteristics of Si IMPATT devices is examined. The dc breakdown and small-signal results of IMPATT devices at room temperature are presented. Numerical results for p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> nn <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> as well as the complementary n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> pp <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> Si diodes in the millimeter-wave frequency range and at different current densities ranging from 2500 to 10 000 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> are given. It is shown that large differences in some important device parameters are obtained, depending on the ionization rates employed.
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