Abstract
The effects of AlN interlayer growth condition on the properties of InAlN/InGaN heterostructures are investigated in detail. Since the properties of InGaN channel are different from the traditional GaN channel, two-step AlN interlayer is proposed, which is proven to be more suitable for the InGaN channel heterostructures than the interlayers grown at constant temperature. Test results show that two-step AlN interlayer can not only significantly improve the interface morphology between the InGaN channel and barrier layers but also make an effective protection of the high-quality InGaN channel. The electron mobility of the InAlN/InGaN heterostructure with two-step AlN interlayer achieves 890 cm2/V s with a high two-dimensional-electron-gas density of 1.78 × 1013 cm−2. The gratifying results indicate that the InGaN channel heterostructure with two-step interlayer is a promising candidate for microwave power devices.
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