Abstract
This paper reports that the planar Hall effect in NiFe/Cu/IrMn multilayers was strongly influenced by the Cu spacer thickness (t Cu), which was due to the variation of interfacial roughness. With t Cu increasing, a peculiar change of planar Hall voltage was observed. The reason for the voltage behaviors was that the interfacial roughness influenced the spin-asymmetry of spin-polarized electrons in ferromagnetic metals. The diffuse scattering to the electrons turned to specular scattering when the interface became flat, leading to the variation of resistivity change (Δρ). As the increase in t Cu, the extremum field was reduced because of the weaken exchange coupling between NiFe and IrMn layers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
