Interface roughness effects on the properties of resonant tunneling hot electron transistor

Abstract

The effects of the interface roughness on the resonant tunneling hot electron transistor properties are studied by calculating an average effective transmission coeflicient for the quantum well structure. Our model for the transmission coefficient includes both the quantum interference and the bulk scattering. The interface roughness is represented by a rectangular distribution having the width of one atomic layer. The results indicate that the interface roughness wilI lower and broaden the resonant peak. The emitter peak tunneling current, base current and collector current will be reduced 50% at room temperature. The effect of interface roughness on the gain is relatively weak.