Abstract
This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.
Highlights
Over the past few years, metal oxide semiconductors have attracted much attention because of their high charge carrier mobility, high optical transparency in the visible region, wide band gap, etc. [1,2,3,4,5,6]
It was found that the ZnO thin film transistors (TFTs) were unstable after 15 7days because the off current increased from 10
We successfully fabricated solution processed ZnO thin film transistors and improved the device performance with interfacial modification layers
Summary
Over the past few years, metal oxide semiconductors have attracted much attention because of their high charge carrier mobility, high optical transparency in the visible region, wide band gap, etc. [1,2,3,4,5,6]. Metal oxide thin film transistors (TFT) have wide application prospects in the generation displays, such as transparent displays, 3-dimensional (3D) displays, and active-matrix organic light emitting diode displays (AMOLEDs) [3,4,5,6,7,8]. Among these metal oxide semiconductors, ZnO with a wide band gap (3.3–3.4 eV) has been one of the most investigated materials due to its high optical transparency and good electrical properties [9,10,11]. A solution process has been widely used to form metal oxide thin films due to its simplicity, low fabrication cost, and large-area processability
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