Abstract

In this work, a fully analytical compact drain current model of back-gated two-dimensional (2D) negative capacitance (NC) FET including interface trap charges has been developed by solving Poisson's, drift-diffusion and 1-D Landau-Khalatnikov equations, and it is validated against the experimental data. In addition, the impact of interface trap charges on the electrical characteristics of the back-gated 2D NC-FET is investigated systematically based on the model. It is found that the subtresdhold swing (SS) and on-off current ration (I on /I off ) are seriously degraded because of the presence of interface traps at 2D channel/oxide interface and 2D NC-FET with a big t f is more immune to the degradation induced by the interface traps.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.