Abstract
The polarization dependent refractive index of disordered, strained InGaAs/GaAs single quantum wells is calculated using the complex dielectric function, taking into consideration the contributions from the Γ, X, and L Brillouin zones. At longer wavelengths the refractive index decreases as the extent of disordering increases, resulting in a positive refractive index step when the lateral confining regions are more extensively disordered. The structure also exhibits birefringence in the quantum well band edge to barrier band-edge wavelength range which decreases with interdiffusion. The refractive index is polarization independent outside this wavelength range. Interdiffusion extends this zero birefringence to shorter wavelengths.
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