Abstract
We have studied the effects of postgrowth rapid thermal annealing on the optical properties of 3-nm-height InAs/GaAs quantum dots covered by 3-nm-thick In x Ga 1− x As ( x =0, 0.1, and 0.2 ) overgrowth layer. At higher annealing temperature ( T⩾750°C), the photoluminescence peak of InGaAs layer has been observed at lower-energy side of the InAs quantum-dot peak. In addition, the blueshift in photoluminescence (PL) emission energy is found to be similar for all samples with increasing the annealing temperature from 650 to 850°C. However, the trend of narrowing of photoluminescence linewidth is significantly different for InAs quantum dots with different In mole fractions in InGaAs overgrowth layer. These results suggest that the intermixing in the lateral direction plays an important role in helping to understand the modification of optical properties induced by rapid thermal annealing.
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