Effects of induction heating on temperature distribution and growth rate in large-size SiC growth system

Abstract

For design of large-size silicon carbide (SiC) growth system, it is essential to choose induction heating parameters such as frequency and power. Modeling and simulations have been performed on a 2-in SiC growth system to investigate the effects of induction heating on the temperature distribution and growth rate. For frequencies in the range of 4–20 kHz, it is found that the maximum temperature and growth temperature in the growth system increase with the frequency while keeping the same current in the induction coil. For lower frequency induction heating, it is difficult to achieve high temperatures, which may be essential for the growth of high-quality crystals. It is observed from experiments that the quality of SiC crystals is related to the growth temperature. The SiC growth rates as a function of system pressure for different frequencies have been obtained by the theoretical method.