Effects of indium concentration on the electronic structures of Be acceptors confined inInxGa1−xAs/Al0.3Ga0.7Asquantum-well structures

Abstract

Electronic structures of acceptors confined at the center of ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}}_{0.3}{\mathrm{Ga}}_{0.7}\mathrm{As}$ quantum wells are studied experimentally and theoretically. The aim of this investigation is to explore the effects of biaxial deformation potential on acceptors confined in quantum-well structures. Satellite peaks related to $2S$ and $2P$ of the confined acceptors have been observed in selective photoluminescence spectra. The deduced energy separations between the acceptor heavy holelike ground-state and different excited-states are compared with the theoretical calculated results. The impurity states are calculated using a four-band effective-mass theory, in which the valence-band mixing as well as the mismatch of the band parameters and the dielectric constants between well and barrier materials have been taken into account. An excellent agreement between experimental and theoretical data was found.