Theoretical calculations of shallow acceptor states in GaAs/AlxGa1-xAs quantum wells in the presence of an external magnetic field.

Abstract

Energy levels of ground and excited shallow acceptor states in the presence of an external magnetic field have been calculated for center-doped GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As quantum wells (QW's). The impurity states are calculated within a four-band effective-mass theory, in which the valence-band mixing as well as the mismatch of the band parameters and the dielectric constants between well and barrier materials have been taken into account. The g factors of the shallow acceptor 1${\mathit{s}}_{3/2}$ ground states and the 2${\mathit{p}}_{3/2}$ excited states are obtained for QW's with different well widths. The infrared optical transitions corresponding to the G, D, and C lines of acceptors in bulk GaAs have also been calculated versus magnetic fields up to 16 T for the case of acceptors confined in QW's.