Effects of In2O3 doping on the microstructure and electrical properties of ZnO–V2O5–Nb2O5 varistor ceramics

Abstract

To understand the effects of In2O3 on the microstructure, grain size dispersion, density and nonlinear electrical characteristics, ZnO–V2O5–Nb2O5 varistor ceramics with 0.02, 0.05 and 0.1 mol.% In2O3 were fabricated via sintering at 950–975 °C for 1 h. The sintered samples were evaluated by x-ray diffraction, scanning electron microscopy, density measurements and electrical measurements through a voltage source meter. In2O3 addition improves relative density to ≥99 % and acts as an efficient grain growth inhibitor, resulting in a narrower grain dispersion and finer ZnO grains due to the formation of In–V–O intergranular phases. The breakdown potential (E1mA) increases sharply to 7.49 ± 0.3 kV/cm (from 1.66 ± 0.1 kV/cm) as a result of grain size reduction to 2.1 ± 0.1 μm (from 3.89 ± 0.2 μm) with In concentration of 0.1 mol.% (from 0.02 mol.%). Doping of In2O3 improves the nonlinear exponent and reduces the leakage current density as a direct consequence of enhanced Schottky barrier height.