Abstract
CdZnTe crystal was grown with different In dopant concentration in excess Te atmosphere. The relation between In dopant concentration and resistivity,carrier concentration,mobility of the CdZnTe crystal was investigated.In addition,In-doped compensation mechanism in CdZnTe crystal was also discussed.Results show that the high resistivity of CdZnTe crystal obtained is 1.89×10~(10)Ω·cm when the In dopant concentration is at the level of 5×10~(17)cm~(-3).
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