Abstract
In-doped CdZnTe (CZT) crystals have been investigated under controlled Te partial pressure. The dependence of the electrical properties on the In dopant concentration under fixed Te partial pressure and the dependence on Te partial pressure under fixed In dopant concentration are presented. The optimized growth parameters, such as Te partial pressure, In dopant concentration, etc., were obtained for preparing In-doped CZT crystal of high resistivity up to 10 Ωcm. In addition, based on an In-doped compensation mechanism in CZT crystals is discussed.
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