Abstract
AbstractThe effects of hydrostatic pressure on the conduction‐electron effective Landé g ‐factor in semiconductor GaAs–Ga1–x Alx As quantum wells under growth‐direction and in‐plane magnetic fields are studied. Calculations are performed by using the Ogg–McCombe effective Hamiltonian in order to take into account the non‐parabolicity and anisotropy of the conduction band. Numerical results are obtained as functions of the ap‐ plied hydrostatic pressure and magnetic fields. Present results are in quite good agreement with experimental measurements in GaAs–Ga1–x Alx As quantum wells in the absence of hydrostatic pressure, and indicate new possibilities for manipulating the electron‐effective g ‐factor in semiconductor low‐dimensional systems. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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