Abstract
The effects of hydrogenation on the structure, transport, and magnetic properties of TM/RE (TM = Fe, Co; RE = La, Y, Gd) multilayers were investigated. The following effects were found to be common to all TM/RE multilayers: (a) transition of RE layers from metal to semiconductor, (b) expansion of RE layers, and (c) enhancement of saturation magnetization. The hydrogenation technique is practicable for changing the interface state and producing a semiconductor layer inside the multilayer, and thus shows potential for producing new functional magnetic multilayers.
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