Abstract
This work investigates the effects of irradiation on Ti3SiC2-containing interphase or coating in SiCf/SiC using a cooperative experiment involving H and He ions. SiC/TiC/Ti3SiC2/Ti5Si3Cx and SiC/Ti3SiC2 were irradiated at room temperature and then annealed at 320 °C for 24 h. Results showed the lattice swelling in all phases. With increasing irradiation dose, SiC and Ti5Si3Cx underwent amorphization, while TiC and Ti3SiC2 remained stable due to their ionic bonds. Annealing facilitated the migration of collision products and H, He ions to grain boundaries and phase interfaces, reducing lattice swelling rates of TiC and Ti3SiC2. The SiC/TiC interface displayed ion cluster accumulation, impacting the interface bonding strength, while the Ti3SiC2/Ti5Si3Cx interface exhibited the formation of cavities. Conversely, the TiC/Ti3SiC2 and SiC/Ti3SiC2 interfaces were stable. These findings indicate that interphase or coating containing Ti3SiC2 monolithic or TiC/Ti3SiC2 multilayered structures possess strong irradiation resistance.
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