Abstract
Effects of Hydrogen Concentration and Cooling Speed on Fabrication of Hydrogenated Amorphous Silicon: Quantum Simulation
Highlights
IntroductionThe cooling rate has much effect on the structure
More recently Luo et al adopted molecular dynamics methods to simulate the influence of different substrate temperatures on the structure of a-Si:H [5], showing that the surface roughness of the film decreases with the increase of the Keywords: Hydrogenated amorphous silicon, structural analysis, electronic property, electronic transport, solar cell, quantum simulation
We investigated the silicon-hydrogen systems based on the density functional (DF) theory with the tight binding (TB) model, by utilizing the DFTB+ package [19] with the matsci-0-3 parameter set [20]
Summary
The cooling rate has much effect on the structure. Sample with the slowest cooling rate is slightly more structured based on Si-Si pair RDF and Nc. The electron transport of a-Si and a-Si:H were evaluated and the superiority of a-Si:H was confirmed. Some defect states, Wronski and Collins [4] reported single-cell nano-amorphous silicon thin film solar cells with a stable conversion rate of 9-10% under high hydrogen dilution ratio conditions. More recently Luo et al adopted molecular dynamics methods to simulate the influence of different substrate temperatures on the structure of a-Si:H [5], showing that the surface roughness of the film decreases with the increase of the Keywords: Hydrogenated amorphous silicon, structural analysis, electronic property, electronic transport, solar cell, quantum simulation. It has been shown that the hydrogenation of a-Si has a beneficial effect in reducing
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