Abstract
The amphoteric element holmium was used to dope X9R Nb-modified BaTiO3-(Bi0.5Na0.5)TiO3 ceramics (BTBNT-Nb) by a conventional solid-state reaction method. The effect of Ho2O3 doping on the dielectric and electric properties of ceramics were investigated. X-ray diffraction results showed that the rare earth of Ho3+ can occupy A- and B-sites of BTBNT-Nb. All samples met X9R specifications and the insulation resistance of the 0.5 mol% Ho2O3 doped ceramic was 1.05 × 1013 Ω/cm. The sintering temperature strongly influenced the core–shell structure of ceramics Transmission electron microscope images revealed that the size of ferroelectric domain in the core decreased with increasing temperature. Multilayer ceramic capacitor chips with ten active dielectric layers were prepared and characterized.
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