Effects of High-Temperature Annealing on the Electrical Characteristics of SOS-MOSFET's

Abstract

Using SOS initially annealed in N2 at different temperatures from 1050 to 1150°C for up to 300 min, both n- and p-channel Si-gate SOS-MOSFET's are fabricated. In this fabrication, the total time at high temperature is limited within 120 min at 1050°C; the temperatures of other steps are kept lower than 900°C. A decrease in the field-effect mobility is found as the annealing time increases for n-channel devices in the saturation region; no change is observed in the mobility in the triode region. For p-channel devices, the field-effect mobility does not decrease in either the saturation or triode regions.