Abstract
High-pressure hydrogen postannealing effects on the electrical and structural properties of the alloy metal gate on film have been investigated. It is shown that high-pressure hydrogen postannealing causes the removal of microvoids formed near the interface between alloy and film, resulting in the increase of gate electrode contact areas, causing the decrease of equivalent oxide thickness. It is further shown that high-pressure hydrogen postannealing plays a role in the reduction of and the interface trap density, leading to the negative shift of flatband voltage and the improvement of the interface quality.
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