Abstract
Tensile strain, crystal quality, and surface morphology of 500 nm thick Ge films were improved after rapid thermal annealing at 900 °C for a short period (< 20 s). The films were grown on Si(001) substrates by ultra-high vacuum chemical vapor deposition. These improvements are attributed to relaxation and defect annihilation in the Ge films. However, after prolonged (> 20 s) rapid thermal annealing, tensile strain and crystal quality degenerated. This phenomenon results from intensive Si—Ge mixing at high temperature.
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