Abstract
Oxide charge trapping and interface state generation phenomena under the various high-field stress conditions have been investigated using capacitors fabricated on both p-and n-type substrates, and p- and n-channel MOSFETs. It was found that prediction based on MOSFET devices yielded shorter lifetimes than predictions based on capacitors.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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