Abstract
Effects of high excitation on localized excitons have been studied in cubic Zn0.42Cd0.58S lattice-matched to GaAs. The time-integrated photoluminescence (PL) spectrum at 2 K under weak excitation conditions (0.025 μJ/cm2) was composed of a single emission peaking at 2.863 eV and its LO-phonon replica. The linewidth of the main peak was 18.5 meV. With increasing excitation energy density (Iex), the spectra broadened, especially on the lower energy side and a small shoulder appeared at about 2.85 eV for Iex ≳ 2 μJ/cm2. In order to study the detailed mechanism, the nonlinear luminescence component was studied by the population mixing technique. The positive signals were detected on the lower energy side (2.85 eV) at an Iex value in the range between 1.8 and 2.9 μJ/cm2. This nonlinear component was attributed to localized excitonic molecules.
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