Abstract
HfO2-based metal-oxide semiconductor (MOS) capacitors were irradiated with high-energy ion beam to study the irradiation effects in these films. HfO2 thin films deposited by radio frequency (rf)-sputtering were irradiated with 80 MeV O6+ ions. The samples were irradiated and characterized at room temperature. Devices were characterized via 1 MHz capacitance–voltage (C‒V) measurements using the midgap method. The irradiation induced dispersion in accumulation and depletion regions with increasing fluence is observed. After irradiation, the midgap voltage shift (Δ V mg) of−0.61 to−1.92 V, flat band voltage shift (Δ V fb) of−0.48 to−2.88 V and threshold voltage shift (Δ V th) of−0.966 to−1.96 V were observed. The change in interface trap charge and oxide trap charge densities after 80 MeV O6+ ions irradiation with fluences were determined from the midgap to flat band stretch out of C‒V curves. The results are reported and explained in terms of changes in microstructure and dielectric properties of the HfO2 thin films after irradiation.
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